The resistivity of a semiconductor material is an important materials acceptance requirement. Resistivity determinations made during device fabrication are also widely used for quality control purposes.

This Test Method covers two procedures which are widely used for making routine measurements.

The two test methods in this Standard are as follows: Method A, Two-Probe and Method B, Four-Probe.

In general, resistivity measurements are most reliable when made on single crystals, since with such material local variations in impurity which affect the resistivity are less severe. Localized impurity segregation at grain boundaries in polycrystalline material may result in large resistivity variations. Such effects are common to either of the measurement test methods but are more severe with the four-probe test method, and its use, therefore, is not recommended for polycrystalline material.

The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

Referenced SEMI Standards (purchase separately)

SEMI M1 — Specification for Polished Single Crystal Silicon Wafers

SEMI M59 — Terminology for Silicon Technology

SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe

SEMI MF374 — Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-Implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure

SEMI MF397 — Test Method for Resistivity of Silicon Bars Using a Two-Point Probe

SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers

SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

Revision History

SEMI MF43-0316 (Reapproved 0921)

SEMI MF43-0316 (technical revision)

SEMI MF43-0705 (Reapproved 0611)

SEMI MF43-0705 (technical revision)

SEMI MF43-99 (first SEMI publication)