This Test Method covers the measurement of the resistivity of single-crystal bars having cross sections that are uniform in area and square, rectangular or round in shape, and having resistivity between 0.0009 Ω·cm and 3000 Ω·cm.
 

This Test Method is intended for use on single crystals of silicon of either n- or p-type for which the uniformity of the crystal cross section is such that the area can be accurately calculated. The specimen cross-sectional area shall be constant to within ±1% of the average area as determined by measurements along the crystal axis (refer to ¶ 12.2).
 

The ratio of the length to the maximum dimension of the cross section of the specimen shall not be less than 3:1 (refer to ¶ 12.1). The largest diameter tested by round robin was 37.5 mm (1.5 in.), and this is the largest diameter that can be measured by this method. The specimen shall normally have a surface finish of 0.4 µm (16 µin.) rms or less (refer to ANSI B46). Other surface finishes may be used if mutually acceptable; however, the multilaboratory precision figures of this test (refer to ¶ 16.1) then may no longer apply.

Referenced SEMI Standards (purchase separately)
SEMI C19 — Specification for Acetone
SEMI C28 — Specification and Guide for Hydrofluoric Acid
SEMI C31 — Specification for Methanol
SEMI C35 — Specification and Guide for Nitric Acid
SEMI M59 — Terminology for Silicon Technology
SEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials

Revision History
SEMI MF397-0812 (Reapproved 1023)
SEMI MF397-0812 (Reapproved 0718)
SEMI MF397-0812 (technical revision)
SEMI MF397-1106 (Reapproved 1111)
SEMI MF397-1106 (technical revision)
SEMI MF397-02 (first SEMI publication)