This Test Method covers the measurement of the resistivity of a silicon substrate of known orientation and type, or of a uniform silicon epitaxial layer of known orientation and type that is deposited on a substrate of the same or opposite type. Resistivity of the epitaxial films can be evaluated without the necessity of thin film correction factors provided that the ratio of layer thickness to effective probe contact radius is greater than 20.
This Test Method is comparative in that the resistivity of an unknown specimen is determined by comparing its measured spreading resistance with that of calibration standards of known resistivity. These calibration standards must have the same surface finish, conductivity type, and orientation as the unknown specimen.
This Test Method is intended for use on silicon substrates and epitaxial layers. Within-laboratory precision has been determined through a multilaboratory experiment on substrates having resistivities from 0.01 Ω·cm to 200 Ω·cm.
This Test Method is nondestructive in the sense that the specimen is not totally destroyed in making the measurements, the specimen need not be cut into a special shape, and no destructive processing need be done on the specimen. However, the probe can produce mechanical damage that may be detrimental to a device fabricated in the probed area.
The volume of semiconductor material sampled is proportional to the third power of the effective electrical contact radius of the probe. For an effective electrical contact radius of 2 µm, the volume sampled by a single probe is approximately 1011 cm3.
Referenced SEMI Standards (purchase separately)
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Slices with an In-line Four-Point Probe
SEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer
SEMI MF110 — Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique
SEMI MF374 — Test Method for Sheet Resistance of Silicon Epitaxial, Diffused Polysilicon, and Ion-Implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure
SEMI MF1392 — Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
Revision History
SEMI MF525-0312 (Reapproved 1023)
SEMI MF525-0312 (Reapproved 0718)
SEMI MF525-0312 (technical revision)
SEMI MF525-0307 (technical revision)
SEMI MF525-0705 (technical revision)
SEMI MF525-00a (first SEMI publication)
