This Test Method covers techniques for determination of the length of the flatted portion of a wafer periphery.
 

This Test Method is intended primarily for use on electronic materials in the form of nominally circular edge-contoured wafers with flat lengths up to 65 mm. The precision of this Test Method has been established directly only for silicon wafers, but it is not expected to be material dependent.
 

This Test Method is suitable for referee measurement purposes and may be used for routine acceptance measurements when specified limits require test precision greater than can be obtained with hand held scale and unaided eye.
 

This Test Method is independent of surface finish.
 

For application to wafers of diameter 3 inch or smaller, the values stated in inch-pound units are to be regarded as the standard whether or not they appear in parentheses; the values stated in acceptable metric units are for information only. For application to wafers of diameter larger than 3 inch, the values stated in acceptable metric units are to be regarded as the standard; the values stated in inch-pound units are for information only.

Referenced SEMI Standards (purchase separately)
SEMI M1 — Specification for Polished Single Crystal Silicon Wafers
SEMI M59 — Terminology for Silicon Technology

Revision History
SEMI MF671-0312 (Reapproved 1023)
SEMI MF671-0312 (Reapproved 0718)
SEMI MF671-0312 (technical revision)
SEMI MF671-0707 (technical revision)
SEMI MF671-0705 (technical revision)
SEMI MF671-99 (first SEMI publication)