This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on April 25, 2007. It was available at www.semi.org in June 2007. Originally published in 1978; previously published March 2004.

NOTICE: This document was balloted and approved for withdrawal in 2007.

Sapphire substrates are utilized for heteroepitaxial growth of silicon films for certain types of device structures. The properties of the films depend in part on the properties of the substrate used. These specifications are intended to provide specifications for the criteria necessary for growth of films suitable for device production.

SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers
SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces