This Specification is intended for use
in procurement of polycrystalline silicon for growth of electronic grade
monocrystalline silicon ingots. Such ingots are sliced into wafers that are
subsequently used for the production of semiconductor devices, integrated
circuits, and other microelectronic components including microelectromechanical
systems (MEMS).
This Specification covers requirements
for polycrystalline silicon (poly) used to produce single crystal silicon by
either the modified Czochralski (Cz) or float zone (FZ) crystal growth technique
for applications in the semiconductor device industry.
Form and dimensional characteristics
are the only standardized properties set forth below. A purchase specification
may include requirements for additional physical properties as listed in this Specification,
together with test methods suitable for determining their magnitudes.
Referenced SEMI Standards (purchase
separately)
SEMI M59 — Terminology for Silicon
Technology
SEMI MF1708 — Practice for Evaluation
of Granular Polysilicon by Melter-Zoner Spectroscopies
SEMI MF1723 — Practice for Evaluation
of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
SEMI MF1724 — Test Method for
Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid
Extraction-Atomic Absorption Spectroscopy
Revision History
SEMI M16-1110 (Reapproved 1121)
SEMI M16-1110 (Reapproved 1015)
SEMI M16-1110 (technical revision)
SEMI M16-1103 (technical revision)
SEMI M16-1296 (technical revision)
SEMI M16-89 (first published)
