This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on April 30, 2010. Initially available at www.semi.org in June 2010.

The developmental wafers covered by this specification are intended for use in research and development of process and metrology equipment and fabrication processes required for manufacturing high-density integrated circuits on 450 mm diameter single crystal silicon wafers. They can also be used to establish the techniques and metrology necessary to support a dimensional specification for 450 mm diameter circuit-quality (prime) wafers.

This specification covers dimensional and crystallographic orientation requirements for 450 mm diameter, polished single crystal silicon wafers needed in development. This document should be superseded by dimensional specification and technology-specific guidelines for circuit-quality wafers.

A complete purchase specification requires that additional physical properties be specified along with test methods for determining their magnitude. If a test instrument is not available, the acceptance criteria should be agreed upon between supplier and customer.

This specification also contains guidance to assist equipment manufacturers and others to specify wafers for use in developing selected process equipment and unit processes.

The specification for 450 mm diameter mechanical handling wafers used in development of 450 mm semiconductor equipment such as 450 mm wafers carriers, load ports, Automated Materials Handling System (AMHS), and robotics has already been published as SEMI M74.

This specification is not intended to be a product wafer specification.

For referee purposes, SI (System International, commonly called metric) units shall be used.

SEMI E45 — Test Method for the Determination of Inorganic Contamination from Mini Environments Using Vapor Phase Decomposition-Total Reflection X-Ray Spectroscopy (VPD/TXRF), VPD-Atomic Absorption Spectroscopy (VPD/AAS), or Inductively Couples Plasma-Mass Spectroscopy (VPD/ICP-MS)
SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers
SEMI M12 — Specification for Serial Alphanumeric Marking of the Front Surface of Wafers
SEMI M13 — Specification for Alphanumeric Marking of Silicon Wafers
SEMI M20 — Practice for Establishing a Wafer Coordinate System
SEMI M33 — Test Method for the Determination of Residual Surface Contamination on Silicon Wafers by Means of Total Reflection X-Ray Fluorescence Spectroscopy (TXRF)
SEMI M43 — Guide for Reporting Wafer Nanotopography
SEMI M59 — Terminology for Silicon Technology
SEMI M67 — Practice for Determining Wafer Near-Edge Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD and ESBIR Metrics
SEMI M68 — Practice for Determining Wafer Near-Edge Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD
SEMI M70 — Practice for Determining Wafer-Near-Edge Geometry Using Partial Wafer Site Flatness
SEMI M73 — Test method for Extracting Relevant Characteristics from Measured Wafers Edge Profiles
SEMI M74 — Specification for 450 mm Diameter Mechanical Handling Polished Wafers
SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF42 — Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF534 — Test Method for Bow of Silicon Wafers
SEMI MF673 — Test Methods for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage
SEMI MF951 — Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
SEMI MF1152 — Test Method for Dimensions of Notches on Silicon Wafers
SEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline
SEMI MF1366 — Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry
SEMI MF1389 — Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities
SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1451 — Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, and Potassium on Silicon and Epi Substrates by Secondary Ion Mass Spectrometry
SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
SEMI MF1809 — Guide for Selection and Use for Etching Solutions to Delineate Structural Defects in Silicon
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
SEMI T3 — Specifications for Wafer Box Labels
SEMI T7 — Specification for Back Surface Marking of Double-Side Polished Wafers with a Two-Dimensional Matrix Code Symbol