The presence of oxygen can be beneficial to certain
manufacturing operations by preventing the formation of process-induced
defects. To the extent that this is true, it becomes important that the oxygen
be uniformly distributed over the entire slice.
Multiple test plans are included to satisfy a variety of
requirements. The characteristic shape and magnitude of oxygen concentration
distributions in crystals are functions of the crystal growth process. Although
the specified test plans are intended to cover oxygen concentration
distributions which are typically found, other distributions may occur. In such
cases, it may be necessary to use test positions other than those specified in
order to adequately describe the distribution pattern.
This Test Method may be used for process control, research
and development, and materials acceptance purposes. In the absence of an
interlaboratory evaluation of the precision of this Test Method, its use for
materials acceptance is not recommended unless the parties involved establish
the degree of correlation which can be expected.
This Test Method covers test site selection and data
reduction procedures for radial variation of the interstitial oxygen
concentration in silicon slices typically used in the manufacture of
microelectronic semiconductor devices.
Referenced SEMI Standards (purchase separately)
SEMI MF81 — Test Method for Measuring Radial Resistivity
Variation on Silicon Wafers
SEMI MF533 — Test Method for Thickness and Thickness
Variation of Silicon Wafers
SEMI MF1188 — Test Method for Interstitial Oxygen Content
of Silicon by Infrared Absorption with Short Baseline
SEMI MF1366 — Test Method for Measuring Oxygen
Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass
Spectrometry
SEMI MF1619 — Test Method for Measurement of Interstitial
Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized
Radiation Incident at the Brewster Angle
Revision History
SEMI MF951-0305 (Reapproved 0222)
SEMI MF951-0305 (Reapproved 0316)
SEMI MF951-0305 (Reapproved 0211)
SEMI MF951-0305 (technical revision)
SEMI MF951-02 (first SEMI publication)
