Tag：StdPbc-0222

3D00200 - SEMI 3D2 - Specification for Glass Carrier Wafers for 3DS-IC Applications

3D00200 - SEMI 3D2 - Specification for Glass Carrier Wafers for 3DS-IC Applications

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3D00400 - SEMI 3D4 - Guide for Metrology for Measuring Thickness, Total Thickness Variation (TTV), Bow, Warp/Sori, and Flatness of Bonded Wafer Stacks

3D00400 - SEMI 3D4 - Guide for Metrology for Measuring Thickness, Total Thickness Variation (TTV), Bow, Warp/Sori, and Flatness of Bonded Wafer Stacks

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3D01300 - SEMI 3D13 - Guide for Measuring Voids in Bonded Wafer Stacks

3D01300 - SEMI 3D13 - Guide for Measuring Voids in Bonded Wafer Stacks

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E12900 - SEMI E129 - Guide to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility

E12900 - SEMI E129 - Guide to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility

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E14800 - SEMI E148 - Specification for Time Synchronization and Definition of the TS-Clock Object

E14800 - SEMI E148 - Specification for Time Synchronization and Definition of the TS-Clock Object

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E03700 - SEMI E37 - Specification for High-Speed SECS Message Services (HSMS) Generic Services

E03700 - SEMI E37 - Specification for High-Speed SECS Message Services (HSMS) Generic Services

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E07800 - SEMI E78 - Guide to Assess and Control Electrostatic Discharge (ESD) and Electrostatic Attraction (ESA) for Equipment

E07800 - SEMI E78 - Guide to Assess and Control Electrostatic Discharge (ESD) and Electrostatic Attraction (ESA) for Equipment

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MF115200 - SEMI MF1152 - Test Method for Dimensions of Notches on Silicon Wafers

MF115200 - SEMI MF1152 - Test Method for Dimensions of Notches on Silicon Wafers

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MF115300 - SEMI MF1153 - Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage Measurements

MF115300 - SEMI MF1153 - Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage Measurements

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MF123900 - SEMI MF1239 - Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction

MF123900 - SEMI MF1239 - Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction

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MF138900 - SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities

MF138900 - SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities

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MF180900 - SEMI MF1809 - Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

MF180900 - SEMI MF1809 - Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

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MF181000 - SEMI MF1810 - Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers

MF181000 - SEMI MF1810 - Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers

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MF084700 - SEMI MF847 - Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

MF084700 - SEMI MF847 - Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

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MF095100 - SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

MF095100 - SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

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E18800 - SEMI E188 - Specification for Malware Free Equipment Integration

E18800 - SEMI E188 - Specification for Malware Free Equipment Integration

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