Wafers must be accurately aligned in various processing
equipment during integrated circuit manufacture.
A notch ground into the edge of the wafer at a specified
orientation provides a positive method for such alignment. The accuracy of the
critical dimensions of the notch controls the possible accuracy of the
alignment.
This Test Method may be used for process control, quality
control, and incoming or outgoing inspection.
Until an index of precision is determined based on an interlaboratory
evaluation, this Test Method is not recommended for use in decisions between
purchasers and suppliers.
This Test Method covers a nondestructive procedure to
determine whether or not the dimensions, except for the blend radius, of fiducial
notches on silicon wafers fall within specified limits.
This Test Method is specifically directed to the notch
dimensions specified in SEMI M1, but with suitable modifications, the
principles of this test method may be applied to any desired notch dimensions.
No test is provided for the blend radius at the apex of the
notch.
The values stated in SI units are to be regarded as the
standard. The values given in parentheses are for information only.
Referenced SEMI Standards (purchase separately)
SEMI M1 — Specification for Polished Single Crystal Silicon
Wafers
Revision History
SEMI MF1152-0316 (Reapproved 0222)
SEMI MF1152-0316 (technical revision)
SEMI MF1152-0305 (Reapproved 0211)
SEMI MF1152-0305 (technical revision)
SEMI MF1152-02 (first SEMI publication)
