This Test Method covers determination of the CR, the false count rate (FCR) and the cumulative false count rate (CFCR) of an SSIS as a function of the latex sphere equivalent (LSE) size of localized light scatterers (LLSs).

This Test Method addresses calculating and reporting SSIS CR from measurements of either PSL depositions or other LLSs on wafers in LSE units.

Two test methods are covered:

Static Method — In which the test is conducted under level 1 variability conditions (without removing the wafer from the stage of the SSIS between scans).

Dynamic Method — In which the test is conducted under level 2 variability conditions (with removing the wafer from and reloading it to the stage of the SSIS between scans).

Specific wafer surfaces (by wafer product, type of film or type of polish) that may affect the measured CR and FCR of an SSIS are to be agreed upon between suppliers and customers.

Referenced SEMI Standards (purchase separately)

SEMI E89 — Guide for Measurement System Analysis (MSA)

SEMI M1 — Specification for Polished Single Crystal Silicon Wafers

SEMI M52 — Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11 nm Technology Generations

SEMI M53 — Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodisperse Reference Spheres on Unpatterned Semiconductor Wafer Surfaces

SEMI M59 — Terminology for Silicon Technology

Revision History

SEMI M50-0923 (technical revision)

SEMI M50-1116 (technical revision)

SEMI M50-1015 (technical revision)

SEMI M50-0310 (technical revision)

SEMI M50-1109 (technical revision)

SEMI M50-0307 (technical revision)

SEMI M50-1104 (technical revision)

SEMI M50-1101 (first published)