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Tag：StdTpc-Gallium Arsenide

M01000 - SEMI M10 - Terminology for Identification of Structures and Features Seen on Gallium Arsenide Wafers

M01000 - SEMI M10 - Terminology for Identification of Structures and Features Seen on Gallium Arsenide Wafers

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M04200 - SEMI M42 - 化合物半導体エピタキシャルウェーハの仕様

M04200 - SEMI M42 - 化合物半導体エピタキシャルウェーハの仕様

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M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers

M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers

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M04600 - SEMI M46 - ECV法によりエピタキシァル層内のキャリア密度プロファイルを測定するための試験方法

M04600 - SEMI M46 - ECV法によりエピタキシァル層内のキャリア密度プロファイルを測定するための試験方法

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M04600 - SEMI M46 - Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by ECV Profiling

M04600 - SEMI M46 - Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by ECV Profiling

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M05400 - SEMI M54 - 半絶縁性（SI）GaAs材料のパラメータのガイド

M05400 - SEMI M54 - 半絶縁性（SI）GaAs材料のパラメータのガイド

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M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters

M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters

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M06300 - SEMI M63 - 化合物半導体エピタキシャルウェーハに使用するサファイア基板の仕様

M06300 - SEMI M63 - 化合物半導体エピタキシャルウェーハに使用するサファイア基板の仕様

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M06300 - SEMI M63 - Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction

M06300 - SEMI M63 - Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction

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M06400 - SEMI M64 - 赤外線吸収スペクトル法による絶縁（SI）ガリウムヒ素単結晶内のEL2深いドナー濃度の試験方法

M06400 - SEMI M64 - 赤外線吸収スペクトル法による絶縁（SI）ガリウムヒ素単結晶内のEL2深いドナー濃度の試験方法

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M06400 - SEMI M64 - Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy

M06400 - SEMI M64 - Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy

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M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy

M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy

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M08300 - SEMI M83 - Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors

M08300 - SEMI M83 - Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors

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M00900 - SEMI M9 - Specification for Polished Monocrystalline Gallium Arsenide Wafers

M00900 - SEMI M9 - Specification for Polished Monocrystalline Gallium Arsenide Wafers

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T00500 - SEMI T5 - Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers

T00500 - SEMI T5 - Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers

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M01000 - SEMI M10 - ガリウムヒ素ウェーハに見られる構造及び特徴の確認のための標準名称

M01000 - SEMI M10 - ガリウムヒ素ウェーハに見られる構造及び特徴の確認のための標準名称

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M01400 - SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals

M01400 - SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals

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M01400 - SEMI M14 - 半絶縁ガリウムヒ素単結晶のためのイオン注入及び活性化プロセス（仕様）

M01400 - SEMI M14 - 半絶縁ガリウムヒ素単結晶のためのイオン注入及び活性化プロセス（仕様）

$0.19 0

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