Tag：StdVol-Materials

M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy

M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy

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M08300 - SEMI M83 - Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors

M08300 - SEMI M83 - Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors

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M08400 - SEMI M84 - Specification for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications

M08400 - SEMI M84 - Specification for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications

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M08500 - SEMI M85 - Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry

M08500 - SEMI M85 - Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry

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M08600 - SEMI M86 - Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers

M08600 - SEMI M86 - Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers

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M08700 - SEMI M87 - Test Method for Contactless Resistivity Measurement of Semi-Insulating Semiconductors

M08700 - SEMI M87 - Test Method for Contactless Resistivity Measurement of Semi-Insulating Semiconductors

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M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods

M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods

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M00900 - SEMI M9 - Specification for Polished Monocrystalline Gallium Arsenide Wafers

M00900 - SEMI M9 - Specification for Polished Monocrystalline Gallium Arsenide Wafers

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M05100 - SEMI M51 - シリコンウェーハ評価のためのSiO2の即時絶縁破壊特性（TZDB）の試験方法

M05100 - SEMI M51 - シリコンウェーハ評価のためのSiO2の即時絶縁破壊特性（TZDB）の試験方法

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M00100 - SEMI M1 - 鏡面単結晶シリコンウェーハの仕様

M00100 - SEMI M1 - 鏡面単結晶シリコンウェーハの仕様

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M01000 - SEMI M10 - ガリウムヒ素ウェーハに見られる構造及び特徴の確認のための標準名称

M01000 - SEMI M10 - ガリウムヒ素ウェーハに見られる構造及び特徴の確認のための標準名称

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M01200 - SEMI M12 - ウェーハ表面の連続英数字マーキングの仕様

M01200 - SEMI M12 - ウェーハ表面の連続英数字マーキングの仕様

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M01300 - SEMI M13 - シリコンウェーハの英数字マーキングの仕様

M01300 - SEMI M13 - シリコンウェーハの英数字マーキングの仕様

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M01400 - SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals

M01400 - SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals

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M01400 - SEMI M14 - 半絶縁ガリウムヒ素単結晶のためのイオン注入及び活性化プロセス（仕様）

M01400 - SEMI M14 - 半絶縁ガリウムヒ素単結晶のためのイオン注入及び活性化プロセス（仕様）

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M01500 - SEMI M15 - Polished Wafer Defect Limits Table for Semi-Insulating Gallium Arsenide Wafers

M01500 - SEMI M15 - Polished Wafer Defect Limits Table for Semi-Insulating Gallium Arsenide Wafers

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M01500 - SEMI M15 - 半絶縁ガリウムヒ素ウェーハ用の鏡面ウェーハの許容表面欠陥表

M01500 - SEMI M15 - 半絶縁ガリウムヒ素ウェーハ用の鏡面ウェーハの許容表面欠陥表

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M01800 - SEMI M18 - Format for Silicon Wafer Specification Form for Order Entry

M01800 - SEMI M18 - Format for Silicon Wafer Specification Form for Order Entry

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