Tag：StdVol-Materials

M04100 - SEMI M41 - 電源デバイス／IC用シリコン・オン・インシュレーター（SOI）の仕様

M04100 - SEMI M41 - 電源デバイス／IC用シリコン・オン・インシュレーター（SOI）の仕様

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M04200 - SEMI M42 - 化合物半導体エピタキシャルウェーハの仕様

M04200 - SEMI M42 - 化合物半導体エピタキシャルウェーハの仕様

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M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers

M04200 - SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers

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M04300 - SEMI M43 - Guide for Reporting Wafer Nanotopography

M04300 - SEMI M43 - Guide for Reporting Wafer Nanotopography

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M04400 - SEMI M44 - シリコン中の酸素の換算係数ガイド

M04400 - SEMI M44 - シリコン中の酸素の換算係数ガイド

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M04400 - SEMI M44 - Guide to Conversion Factors for Interstitial Oxygen in Silicon

M04400 - SEMI M44 - Guide to Conversion Factors for Interstitial Oxygen in Silicon

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M04500 - SEMI M45 - Specification for 300 mm Wafer Shipping System

M04500 - SEMI M45 - Specification for 300 mm Wafer Shipping System

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M04600 - SEMI M46 - ECV法によりエピタキシァル層内のキャリア密度プロファイルを測定するための試験方法

M04600 - SEMI M46 - ECV法によりエピタキシァル層内のキャリア密度プロファイルを測定するための試験方法

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M04600 - SEMI M46 - Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by ECV Profiling

M04600 - SEMI M46 - Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by ECV Profiling

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M04900 - SEMI M49 - Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations

M04900 - SEMI M49 - Guide for Specifying Geometry Measurement Systems for Silicon Wafers for the 130 nm to 16 nm Technology Generations

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M05000 - SEMI M50 - Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method

M05000 - SEMI M50 - Test Method for Determining Capture Rate and False Count Rate for Surface Scanning Inspection Systems by the Overlay Method

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M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity

M05100 - SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity

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M05200 - SEMI M52 - Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 5 nm Technology Generations

M05200 - SEMI M52 - Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 5 nm Technology Generations

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M05300 - SEMI M53 - Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces

M05300 - SEMI M53 - Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Monodispere Reference Spheres on Unpatterned Semiconductor Wafer Surfaces

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M05400 - SEMI M54 - 半絶縁性（SI）GaAs材料のパラメータのガイド

M05400 - SEMI M54 - 半絶縁性（SI）GaAs材料のパラメータのガイド

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M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters

M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters

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M05500 - SEMI M55 - Specification for Polished Monocrystalline Silicon Carbide Wafers

M05500 - SEMI M55 - Specification for Polished Monocrystalline Silicon Carbide Wafers

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M05600 - SEMI M56 - Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias

M05600 - SEMI M56 - Practice for Determining Cost Components for Metrology Equipment Due to Measurement Variability and Bias

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